Samsung M471B5773CHS-CH9 2GB vs SK Hynix HMT325S6BFR8C-H9 2GB

Punteggio complessivo

Samsung M471B5773CHS-CH9 2GB

Samsung M471B5773CHS-CH9 2GB

Punteggio complessivo

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5773CHS-CH9 2GB

Motivi da considerare
Samsung M471B5773CHS-CH9 2GB

Al di sotto della latenza nei test PassMark, ns

31 41

Intorno 24% latenza inferiore

SK Hynix HMT325S6BFR8C-H9 2GB

Motivi da considerare
SK Hynix HMT325S6BFR8C-H9 2GB

Velocità di lettura più elevata, GB/s

11.6 9.8

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.3 6.7

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5773CHS-CH9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

31 41
Velocità di lettura, GB/s

9.8 11.6
Velocità di scrittura, GB/s

6.7 7.3
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1304 1438

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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