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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

総合得点
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

相違点 仕様 コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
バグを報告する
  • PassMarkテストでのレイテンシー以下、ns
    24 left arrow 30
    周辺 20% 低遅延
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB 考慮すべき理由
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
バグを報告する
  • 読み出し速度の高速化、GB/s
    16.4 left arrow 16
    テスト平均値
  • 書き込み速度の高速化、GB/s
    13.4 left arrow 12.5
    テスト平均値

仕様

技術仕様の完全リスト
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
主な特徴
  • メモリータイプ
    DDR4 left arrow DDR4
  • PassMarkにおけるレイテンシー、ns
    24 left arrow 30
  • 読み出し速度、GB/s
    16.0 left arrow 16.4
  • 書き込み速度、GB/秒
    12.5 left arrow 13.4
  • メモリ帯域幅、mbps
    19200 left arrow 19200
Other
  • 商品説明
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • タイミング / クロック速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • ランキングPassMark（多ければ多いほど良い）
    2925 left arrow 3188

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAMの比較

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB RAMの比較

Corsair CMSX32GX4M2A3200C22 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
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