Kingston KVR533D2N4 512MB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

総合得点

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

総合得点

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

相違点仕様コメント

相違点

Kingston KVR533D2N4 512MB

考慮すべき理由
Kingston KVR533D2N4 512MB

バグを報告する

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

考慮すべき理由
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

71 75

周辺 -6% 低遅延
読み出し速度の高速化、GB/s

15.6 1

テスト平均値
書き込み速度の高速化、GB/s

6.4 1,672.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 4200

周辺 5.07 高帯域

仕様

技術仕様の完全リスト

Kingston KVR533D2N4 512MB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

75 71
読み出し速度、GB/s

1,943.5 15.6
書き込み速度、GB/秒

1,672.1 6.4
メモリ帯域幅、mbps

4200 21300

Other

商品説明

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

301 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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