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Kingston KVR533D2N4 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Kingston KVR533D2N4 512MB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Kingston KVR533D2N4 512MB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Below the latency in the PassMark tests, ns
71
75
Around -6% lower latency
Faster reading speed, GB/s
15.6
1
Average value in the tests
Faster write speed, GB/s
6.4
1,672.1
Average value in the tests
Higher memory bandwidth, mbps
21300
4200
Around 5.07 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR533D2N4 512MB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
71
Read speed, GB/s
1,943.5
15.6
Write speed, GB/s
1,672.1
6.4
Memory bandwidth, mbps
4200
21300
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
4-4-4-12 / 533 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
301
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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