Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

総合得点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

総合得点

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

相違点仕様コメント

相違点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

考慮すべき理由
Micron Technology 8ATF2G64HZ-3G2E2 16GB

バグを報告する

より高いメモリ帯域幅、mbps

25600 21300

周辺 1.2% 高帯域

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

考慮すべき理由
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 51

周辺 -59% 低遅延
読み出し速度の高速化、GB/s

19.4 15.6

テスト平均値
書き込み速度の高速化、GB/s

16.3 11.8

テスト平均値

仕様

技術仕様の完全リスト

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

51 32
読み出し速度、GB/s

15.6 19.4
書き込み速度、GB/秒

11.8 16.3
メモリ帯域幅、mbps

25600 21300

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2687 3726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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