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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
51
左右 -59% 更低的延时
更快的读取速度,GB/s
19.4
15.6
测试中的平均数值
更快的写入速度,GB/s
16.3
11.8
测试中的平均数值
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
32
读取速度,GB/s
15.6
19.4
写入速度,GB/s
11.8
16.3
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2687
3726
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CF7 2GB
Kingston HP24D4U7S8MBP-8 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston 9965604-033.D00G 16GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMU32GX4M4C3000C15 8GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
AMD AE34G1601U1 4GB
Mushkin 99[2/7/4]192F 4GB
Samsung M393B5170FH0-CH9 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
EVGA 8GX-D4-3000-MR 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Samsung M393B5170FH0-CH9 4GB
Kingston KHX2133C14D4/8G 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905744-024.A00G 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA82GS6JJR8N-VK 16GB
报告一个错误
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Bug description
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