RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
51
Around -59% lower latency
Faster reading speed, GB/s
19.4
15.6
Average value in the tests
Faster write speed, GB/s
16.3
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
32
Read speed, GB/s
15.6
19.4
Write speed, GB/s
11.8
16.3
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2687
3726
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4266C19-32GTZR 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMK32GX4M2D3600C16 16GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMK16GX4M2Z2933C16 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMH128GX4M4E3200C16 32GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905678-138.A00G 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C18-32GTRS 32GB
Kingston KHX318C10FR/8G 8GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
AMD AE34G1601U1 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Mushkin 99[2/7/4]200F 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Report a bug
×
Bug description
Source link