Nanya Technology NT512T64U88B0BY-3C 512MB vs Chun Well Technology Holding Limited D4U0832160B 8GB

総合得点

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

総合得点

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

相違点仕様コメント

相違点

Nanya Technology NT512T64U88B0BY-3C 512MB

考慮すべき理由
Nanya Technology NT512T64U88B0BY-3C 512MB

バグを報告する

Chun Well Technology Holding Limited D4U0832160B 8GB

考慮すべき理由
Chun Well Technology Holding Limited D4U0832160B 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 71

周辺 -122% 低遅延
読み出し速度の高速化、GB/s

20.5 2

テスト平均値
書き込み速度の高速化、GB/s

14.5 1,322.6

テスト平均値
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT512T64U88B0BY-3C 512MB

Chun Well Technology Holding Limited D4U0832160B 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

71 32
読み出し速度、GB/s

2,831.6 20.5
書き込み速度、GB/秒

1,322.6 14.5
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

399 3379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Samsung M471A1K43BB1-CTD 8GB

Samsung M471A1K43BB1-CTD 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMW32GX4M4C3200C14 8GB

Corsair CMW32GX4M4C3200C14 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMW16GX4M2C3200C14 8GB

Corsair CMW16GX4M2C3200C14 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston KF2666C15S4/16G 16GB

Kingston KF2666C15S4/16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Apacer Technology GD2.1527WH.002 8GB

Apacer Technology GD2.1527WH.002 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMR128GX4M8X3800C19 16GB

Corsair CMR128GX4M8X3800C19 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMR16GX4M2C3200C16 8GB

Corsair CMR16GX4M2C3200C16 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB