Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

総合得点

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

相違点仕様コメント

相違点

Samsung M395T2863QZ4-CF76 1GB

考慮すべき理由
Samsung M395T2863QZ4-CF76 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 16.8

テスト平均値
書き込み速度の高速化、GB/s

2,404.5 13.5

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

26 104

周辺 -300% 低遅延
より高いメモリ帯域幅、mbps

21300 6400

周辺 3.33 高帯域

仕様

技術仕様の完全リスト

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

104 26
読み出し速度、GB/s

3,192.0 16.8
書き込み速度、GB/秒

2,404.5 13.5
メモリ帯域幅、mbps

6400 21300

Other

商品説明

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

786 2880

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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