Micron Technology 4ATF51264HZ-3G2J1 4GB vs Samsung M471A1K43EB1-CWE 8GB

Pontuação geral

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Pontuação geral

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Diferenças Especificações Comentários

Diferenças

Micron Technology 4ATF51264HZ-3G2J1 4GB

Razões a considerar
Micron Technology 4ATF51264HZ-3G2J1 4GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

42 46

Por volta de 9% menor latência

Samsung M471A1K43EB1-CWE 8GB

Razões a considerar
Samsung M471A1K43EB1-CWE 8GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

16 15.7

Valor médio nos testes

Especificações

Lista completa de especificações técnicas

Micron Technology 4ATF51264HZ-3G2J1 4GB

Samsung M471A1K43EB1-CWE 8GB

Características principais

Tipo de memória

DDR4 DDR4
Latência em PassMark, ns

42 46
Velocidade de leitura, GB/s

15.7 16.0
Velocidade de escrita, GB/s

12.4 12.4
Largura de banda de memória, mbps

25600 25600

Other

Descrição

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Tempos / Velocidade do relógio

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (Quanto mais, melhor)

2352 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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