Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

Pontuação geral

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Pontuação geral

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T3354BZ0-CCC 256MB

Razões a considerar
Samsung M3 78T3354BZ0-CCC 256MB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

2 11

Valor médio nos testes

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Razões a considerar
Micron Technology 18ASF1G72PZ-2G1B1 8GB

Relatar um erro

Velocidade de escrita mais rápida, GB/s

9.1 1,519.2

Valor médio nos testes
Maior largura de banda de memória, mbps

17000 3200

Por volta de 5.31 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

46 46
Velocidade de leitura, GB/s

2,909.8 11.0
Velocidade de escrita, GB/s

1,519.2 9.1
Largura de banda de memória, mbps

3200 17000

Other

Descrição

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Tempos / Velocidade do relógio

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (Quanto mais, melhor)

241 2396

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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