Samsung M3 78T5663EH3-CF7 2GB vs SK Hynix MMA82GS6CJR8N-VK 16GB

Pontuação geral

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Pontuação geral

SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 78T5663EH3-CF7 2GB

Razões a considerar
Samsung M3 78T5663EH3-CF7 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 16.4

Valor médio nos testes

SK Hynix MMA82GS6CJR8N-VK 16GB

Razões a considerar
SK Hynix MMA82GS6CJR8N-VK 16GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

23 65

Por volta de -183% menor latência
Velocidade de escrita mais rápida, GB/s

8.8 2,451.8

Valor médio nos testes
Maior largura de banda de memória, mbps

21300 6400

Por volta de 3.33 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M3 78T5663EH3-CF7 2GB

SK Hynix MMA82GS6CJR8N-VK 16GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

65 23
Velocidade de leitura, GB/s

4,605.9 16.4
Velocidade de escrita, GB/s

2,451.8 8.8
Largura de banda de memória, mbps

6400 21300

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (Quanto mais, melhor)

878 2532

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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