RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
pt
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology W6451U67J7240NB 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Avant Technology W6451U67J7240NB 4GB

Pontuação geral
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Pontuação geral
star star star star star
Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Diferenças Especificações Comentários

Diferenças

Samsung M3 93T5750CZA-CE6 2GB Razões a considerar
Samsung M3 93T5750CZA-CE6 2GB
Relatar um erro
  • Velocidade de leitura mais rápida, GB/s
    3 left arrow 15.1
    Valor médio nos testes
Avant Technology W6451U67J7240NB 4GB Razões a considerar
Avant Technology W6451U67J7240NB 4GB
Relatar um erro
  • Abaixo da latência nos testes do PassMark, ns
    73 left arrow 77
    Por volta de -5% menor latência
  • Velocidade de escrita mais rápida, GB/s
    8.1 left arrow 2,622.0
    Valor médio nos testes
  • Maior largura de banda de memória, mbps
    19200 left arrow 5300
    Por volta de 3.62 maior largura de banda

Especificações

Lista completa de especificações técnicas
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology W6451U67J7240NB 4GB
Características principais
  • Tipo de memória
    DDR2 left arrow DDR4
  • Latência em PassMark, ns
    77 left arrow 73
  • Velocidade de leitura, GB/s
    3,405.2 left arrow 15.1
  • Velocidade de escrita, GB/s
    2,622.0 left arrow 8.1
  • Largura de banda de memória, mbps
    5300 left arrow 19200
Other
  • Descrição
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Tempos / Velocidade do relógio
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (Quanto mais, melhor)
    763 left arrow 1744

Samsung M3 93T5750CZA-CE6 2GB Comparações de RAM

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Avant Technology W6451U67J7240NB 4GB Comparações de RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Últimas comparações

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Memória RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
Memória RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information JM2666HSB-16G 16GB
Transcend Information JM2666HSB-16G 16GB
Memória RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMK32GX4M4B3866C18 8GB
Corsair CMK32GX4M4B3866C18 8GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2D3200C16 16GB
Corsair CMK32GX4M2D3200C16 16GB
Memória RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2Z4000C18 8GB
Corsair CMK16GX4M2Z4000C18 8GB
Memória RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Memória RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston HP32D4S2S8ME-16 16GB
Kingston HP32D4S2S8ME-16 16GB
Memória RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GTZSK 8GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Memória RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2133C15-4GIS 4GB
G Skill Intl F4-2133C15-4GIS 4GB
Memória RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Memória RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Memória RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
Memória RAM