A-DATA Technology AM1L16BC4R1-B1MS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

A-DATA Technology AM1L16BC4R1-B1MS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分
star star star star star
A-DATA Technology AM1L16BC4R1-B1MS 4GB

A-DATA Technology AM1L16BC4R1-B1MS 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

差异

  • 低于PassMark测试中的延时,ns
    30 left arrow 31
    左右 3% 更低的延时
  • 更快的读取速度,GB/s
    11.2 left arrow 8.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    7.6 left arrow 4.3
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology AM1L16BC4R1-B1MS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    30 left arrow 31
  • 读取速度,GB/s
    8.8 left arrow 11.2
  • 写入速度,GB/s
    4.3 left arrow 7.6
  • 内存带宽,mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1157 left arrow 2026
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较