RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DOVF1B163G2G 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
比较
A-DATA Technology DOVF1B163G2G 2GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
总分
A-DATA Technology DOVF1B163G2G 2GB
总分
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
更快的读取速度,GB/s
4
16
测试中的平均数值
需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
低于PassMark测试中的延时,ns
37
56
左右 -51% 更低的延时
更快的写入速度,GB/s
12.6
1,925.7
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
37
读取速度,GB/s
4,315.2
16.0
写入速度,GB/s
1,925.7
12.6
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
658
2808
A-DATA Technology DOVF1B163G2G 2GB RAM的比较
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DOVF1B163G2G 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Essencore Limited KD48GS481-26N1600 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CM2X1024-8500C5D 1GB
Corsair CMV16GX4M1A2666C18 16GB
Kingston 9905403-038.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C15-8GTZSW 8GB
Samsung M393B2G70BH0-CH9 16GB
Essencore Limited KD4AGU880-32A160T 16GB
Kingston 99U5474-028.A00LF 4GB
Corsair CM4X16GE2400C16S4 16GB
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J642GU42J5213NF 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2400C15-8GRK 8GB
Kingston 9905403-519.A00LF 4GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3000C14-16GVK 16GB
报告一个错误
×
Bug description
Source link