A-DATA Technology VDQVE1B16 2GB vs Kingston HP24D4S7S8MBP-8 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston HP24D4S7S8MBP-8 8GB

Kingston HP24D4S7S8MBP-8 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 12.9

测试中的平均数值

Kingston HP24D4S7S8MBP-8 8GB

需要考虑的原因
Kingston HP24D4S7S8MBP-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 -18% 更低的延时
更快的写入速度，GB/s

9.5 2,061.2

测试中的平均数值
更高的内存带宽，mbps

18200 6400

左右 2.84 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston HP24D4S7S8MBP-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 39
读取速度，GB/s

4,937.3 12.9
写入速度，GB/s

2,061.2 9.5
内存带宽，mbps

6400 18200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-18200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz no data
排名PassMark (越多越好)

759 2169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KF552C40-16 16GB

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Kingston KHX4266C19D4/8GX 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Crucial Technology BL8G32C16U4R.M8FE 8GB

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Samsung M471B5674QH0-YK0 2GB

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Samsung M471A1G44AB0-CWE 8GB

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Corsair CMD16GX4M2B3200C16 8GB

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Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

G Skill Intl F4-3333C16-16GTZ 16GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB