RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology VDQVE1B16 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB

A-DATA Technology VDQVE1B16 2GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 53
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 10.1
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G3B1 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.0 left arrow 2,061.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 53
  • 读取速度，GB/s
    4,937.3 left arrow 10.1
  • 写入速度，GB/s
    2,061.2 left arrow 8.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 2319

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Micron Technology 9ASF51272PZ-2G3B1 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905700-011.A00G 8GB
Kingston 9905700-011.A00G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C16-8GIS 8GB
G Skill Intl F4-3200C16-8GIS 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X4GD3000C15K4 4GB
Corsair CM4X4GD3000C15K4 4GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston MSI24D4S7S8S8-8 8GB
Kingston MSI24D4S7S8S8-8 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMT128GX4M8C3000C15 16GB
Corsair CMT128GX4M8C3000C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston 9905702-012.A00G 8GB
Kingston 9905702-012.A00G 8GB
内存RAM