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A-DATA Technology VDQVE1B16 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
比较
A-DATA Technology VDQVE1B16 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
低于PassMark测试中的延时,ns
46
73
左右 37% 更低的延时
更快的读取速度,GB/s
4
15.2
测试中的平均数值
需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
报告一个错误
更快的写入速度,GB/s
9.1
2,061.2
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
73
读取速度,GB/s
4,937.3
15.2
写入速度,GB/s
2,061.2
9.1
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
759
1843
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology VDQVE1B16 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
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Corsair CMW32GX4M4Z2933C16 8GB
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Golden Empire CL16-16-16 D4-2800 8GB
Kingston KHX3000C15D4/8GX 8GB
Kingston KHX3000C15D4/4GX 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston X75V1H-MIE 32GB
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