AMD AE34G1601U1 4GB vs G Skill Intl F4-3400C16-8GTZ 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

G Skill Intl F4-3400C16-8GTZ 8GB

G Skill Intl F4-3400C16-8GTZ 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

G Skill Intl F4-3400C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3400C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 67

左右 -131% 更低的延时
更快的读取速度，GB/s

18.9 6.8

测试中的平均数值
更快的写入速度，GB/s

15.0 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

G Skill Intl F4-3400C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 29
读取速度，GB/s

6.8 18.9
写入速度，GB/s

3.6 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 3466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

G Skill Intl F4-3333C16-16GTZSK 16GB

G Skill Intl F4-3333C16-16GTZSK 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB

Chun Well Technology Holding Limited CL19-20-20 D4-3600

SK Hynix HMT41GU7BFR8C-RD 8GB

SK Hynix HMT41GU7BFR8C-RD 8GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kingston 9905598-044.A00G 16GB

Kingston 9905598-044.A00G 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMK16GX4M2B3733C17 8GB

Corsair CMK16GX4M2B3733C17 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB