AMD AE34G1601U1 4GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 67

左右 -235% 更低的延时
更快的读取速度，GB/s

19.7 6.8

测试中的平均数值
更快的写入速度，GB/s

15.2 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 20
读取速度，GB/s

6.8 19.7
写入速度，GB/s

3.6 15.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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最新比较

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Samsung M471B5173QH0-YK0 4GB

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Kingston XRGM6C-MIE 16GB

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Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 36ASF4G72PZ-2G3B1 32GB

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G Skill Intl F3-2400C11-8GSR 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMW32GX4M4K3733C17 8GB

Corsair CMW32GX4M4K3733C17 8GB

Crucial Technology CT51264AC800.C16FC 4GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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Patriot Memory (PDP Systems) PSD38G16002 8GB

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Kingston HP24D4U7S8MBP-4 4GB

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A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB