Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3200C14-16GTZKW 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

G Skill Intl F4-3200C14-16GTZKW 16GB

G Skill Intl F4-3200C14-16GTZKW 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 19.7

测试中的平均数值
更快的写入速度，GB/s

2,256.8 15.5

测试中的平均数值

G Skill Intl F4-3200C14-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 64

左右 -146% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3200C14-16GTZKW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 26
读取速度，GB/s

4,651.3 19.7
写入速度，GB/s

2,256.8 15.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 3832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A2K40CB1-CRC 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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G Skill Intl F4-3200C14-16GTZKW 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F3-2400C11-8GSR 8GB

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Samsung M471A2K43CB1-CTD 16GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

SK Hynix HMA82GR7JJR8N-VK 16GB

SK Hynix HMA82GR7JJR8N-VK 16GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB