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AMD AE34G1601U1 4GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB

AMD AE34G1601U1 4GB vs Gold Key Technology Co Ltd NMUD480E86-3200 8GB

总分
star star star star star
AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

差异 规格 评论

差异

AMD AE34G1601U1 4GB 需要考虑的原因
AMD AE34G1601U1 4GB
报告一个错误
Gold Key Technology Co Ltd NMUD480E86-3200 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 67
    左右 -148% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD AE34G1601U1 4GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 27
  • 读取速度，GB/s
    6.8 left arrow 19.5
  • 写入速度，GB/s
    3.6 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    998 left arrow 3631

AMD AE34G1601U1 4GB RAM的比较

Panram International Corporation PUD31600C94GNJK 4GB
Kingston 9905428-196.A00LF 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M378B5273EB0-CK0 4GB
Samsung M378B5273EB0-CK0 4GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393A4K40BB0-CPB 32GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMT32GX4M2E3200C16 16GB
Corsair CMT32GX4M2E3200C16 16GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905678-023.A00G 8GB
Kingston 9905678-023.A00G 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
AMD R7416G2133U2S 16GB
AMD R7416G2133U2S 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905622-058.A00G 8GB
Kingston 9905622-058.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905678-041.A00G 4GB
Kingston 9905678-041.A00G 4GB
内存RAM
Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.AOOLF 4GB
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
内存RAM