AMD AE34G1601U1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 67

左右 -158% 更低的延时
更快的读取速度，GB/s

16.2 6.8

测试中的平均数值
更快的写入速度，GB/s

12.6 3.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 26
读取速度，GB/s

6.8 16.2
写入速度，GB/s

3.6 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

998 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Crucial Technology CT8G4DFS824A.C8FE 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9905622-057.A00G 4GB

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AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

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Team Group Inc. UD5-6400 16GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Kingston KVR800D2N6/2G 2GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Kingston 99U5584-005.A00LF 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB