AMD R5S38G1601U2S 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

总分

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

差异规格评论

差异

AMD R5S38G1601U2S 8GB

需要考虑的原因
AMD R5S38G1601U2S 8GB

报告一个错误

更快的读取速度，GB/s

15.4 10

测试中的平均数值
更快的写入速度，GB/s

9.2 8.5

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 -23% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5S38G1601U2S 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 30
读取速度，GB/s

15.4 10.0
写入速度，GB/s

9.2 8.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2581 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS8266.M8FE 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

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Transcend Information JM2666HSB-8G 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

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SK Hynix HMA81GS6DJR8N-VK 8GB

Corsair CML8GX3M2A1866C9 4GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

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G Skill Intl F4-4600C19-8GTZKKC 8GB

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