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ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs A-DATA Technology DDR4 3300 2OZ 4GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
A-DATA Technology DDR4 3300 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
17
26
左右 -53% 更低的延时
更快的读取速度,GB/s
22
12.6
测试中的平均数值
更快的写入速度,GB/s
17.0
9.5
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
17
读取速度,GB/s
12.6
22.0
写入速度,GB/s
9.5
17.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2174
3731
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
A-DATA Technology DDR4 3300 2OZ 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-155.A00LF 8GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
ASint Technology SSA302G08-EGN1C 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
Kingston 9905403-444.A00LF 4GB
Kingston KKRVFX-MIE 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CM4X4GF2400C16S2 4GB
Samsung M471B1G73BH0-CH9 8GB
Samsung M471B5673FH0-CF8 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMH16GX4M2E3200C16 8GB
Kingston KF552C40-16 16GB
Kingston 9905700-053.A00G 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Corsair CMR16GX4M2C3000C16 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Samsung DDR3 8GB 1600MHz 8GB
Asgard VMA44UI-MEC1U2AW2 32GB
Kingston HP669238-071-HYC 4GB
Gloway International (HK) STK4U2400D17161C 16GB
报告一个错误
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Bug description
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