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ASint Technology SSA302G08-EGN1C 4GB
Avant Technology W6451U66J5213ND 4GB

ASint Technology SSA302G08-EGN1C 4GB vs Avant Technology W6451U66J5213ND 4GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
Avant Technology W6451U66J5213ND 4GB 需要考虑的原因
Avant Technology W6451U66J5213ND 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Avant Technology W6451U66J5213ND 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    12.6 left arrow 15.6
  • 写入速度，GB/s
    9.5 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2316

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Avant Technology W6451U66J5213ND 4GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Samsung M471B5173QH0-YK0 4GB
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内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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内存RAM
Samsung M471B5173QH0-YK0 4GB
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内存RAM
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内存RAM
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