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ASint Technology SSA302G08-EGN1C 4GB
Corsair CMR32GX4M4A2666C16 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Corsair CMR32GX4M4A2666C16 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Corsair CMR32GX4M4A2666C16 8GB

Corsair CMR32GX4M4A2666C16 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 21% 更低的延时
Corsair CMR32GX4M4A2666C16 8GB 需要考虑的原因
Corsair CMR32GX4M4A2666C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMR32GX4M4A2666C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 33
  • 读取速度，GB/s
    12.6 left arrow 16.1
  • 写入速度，GB/s
    9.5 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3155

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Corsair CMR32GX4M4A2666C16 8GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
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Panram International Corporation PUD43000C164G2NJK 4GB
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Kingston KF552C40-16 16GB
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A-DATA Technology VDQVE1B16 2GB
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Kingston 99U5474-037.A00LF 4GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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Micron Technology 8ATF1G64HZ-3G2E1 8GB
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内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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内存RAM
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Samsung M471A2K43DB1-CWE 16GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-16GFT 16GB
G Skill Intl F4-2400C15-16GFT 16GB
内存RAM
Crucial Technology BLS8G4D26BFSC.16FE 8GB
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Crucial Technology CT16G4SFD824A.M16FE 16GB
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内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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Kingston 9905670-012.A00G 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM