ASint Technology SSA302G08-EGN1C 4GB vs Corsair CMW64GX4M2D3600C18 32GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Corsair CMW64GX4M2D3600C18 32GB

Corsair CMW64GX4M2D3600C18 32GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Corsair CMW64GX4M2D3600C18 32GB

需要考虑的原因
Corsair CMW64GX4M2D3600C18 32GB

报告一个错误

更快的读取速度，GB/s

17 12.6

测试中的平均数值
更快的写入速度，GB/s

15.0 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Corsair CMW64GX4M2D3600C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

12.6 17.0
写入速度，GB/s

9.5 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2174 3690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43DB1-CTD 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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SK Hynix HYMP125U64CP8-S6 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M378B1G73DB0-CK0 8GB

Samsung M378B1G73DB0-CK0 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston 99U5474-037.A00LF 4GB

Essencore Limited IM4AGU88A30-FGGHMB 16GB

Essencore Limited IM4AGU88A30-FGGHMB 16GB