ASint Technology SSA302G08-EGN1C 4GB vs Kingston KHX2133C15S4/8G 8GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Kingston KHX2133C15S4/8G 8GB

Kingston KHX2133C15S4/8G 8GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

Kingston KHX2133C15S4/8G 8GB

需要考虑的原因
Kingston KHX2133C15S4/8G 8GB

报告一个错误

更快的读取速度，GB/s

15.2 12.6

测试中的平均数值
更快的写入速度，GB/s

11.7 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Kingston KHX2133C15S4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

12.6 15.2
写入速度，GB/s

9.5 11.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2174 2600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C18-16GTZN 16GB

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Team Group Inc. UD5-6400 16GB

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Crucial Technology CT16G4DFD8213.C16FH1 16GB

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Mushkin 99[2/7/4]198F 8GB

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A-DATA Technology VDQVE1B16 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

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Kingston HP698651-154-MCN 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 99P5471-002.A00LF 2GB

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Corsair CMK16GX4M2B4266C19 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB