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ASint Technology SSA302G08-EGN1C 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Patriot Memory (PDP Systems) 3600 C14 Series 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
Patriot Memory (PDP Systems) 3600 C14 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 26
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 19
  • 读取速度，GB/s
    12.6 left arrow 16.6
  • 写入速度，GB/s
    9.5 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3626

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB RAM的比较

Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Patriot Memory (PDP Systems) PSD22G8002 2GB
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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
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Patriot Memory (PDP Systems) 3600 C14 Series 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Avant Technology F641GU67F9333G 8GB
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