Avant Technology F6451U64F9333G 4GB vs Corsair CMW8GX4M1Z3200C16 8GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

Corsair CMW8GX4M1Z3200C16 8GB

需要考虑的原因
Corsair CMW8GX4M1Z3200C16 8GB

报告一个错误

更快的读取速度，GB/s

17.3 12.8

测试中的平均数值
更快的写入速度，GB/s

15.3 6.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Corsair CMW8GX4M1Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

12.8 17.3
写入速度，GB/s

6.7 15.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244BB0-CRC 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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Corsair CMW8GX4M1Z3200C16 8GB

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Samsung M393B5170FH0-CK0 4GB

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Samsung M393B1K70CH0-CH9 8GB

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InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Kingston 9905678-102.A00G 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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G Skill Intl F4-2400C14-16GRK 16GB