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Corsair CM3X8GA2400C11Y2R 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Corsair CM3X8GA2400C11Y2R 8GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分
star star star star star
Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分
star star star star star
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异 规格 评论

差异

Corsair CM3X8GA2400C11Y2R 8GB 需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 23
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 18.1
    测试中的平均数值
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB 需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
报告一个错误
  • 更快的写入速度，GB/s
    15.0 left arrow 13.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 23
  • 读取速度，GB/s
    19.1 left arrow 18.1
  • 写入速度，GB/s
    13.1 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3252 left arrow 3317

Corsair CM3X8GA2400C11Y2R 8GB RAM的比较

Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965525-058.A00LF 8GB
Kingston 9965525-058.A00LF 8GB
Corsair CMK128GX4M8B3200C16 16GB
Corsair CMK128GX4M8B3200C16 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
AMD R538G1601U2S-UGO 8GB
AMD R538G1601U2S-UGO 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramsta Ramsta-2666MHz-4G 4GB
Ramsta Ramsta-2666MHz-4G 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston MSI24D4S7S7MH-16 16GB
Kingston MSI24D4S7S7MH-16 16GB
内存RAM
Kingston 9905702-136.A00G 8GB
Kingston 9905702-136.A00G 8GB
AMD R748G2606U2S 8GB
AMD R748G2606U2S 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905625-074.A00G 16GB
Kingston 9905625-074.A00G 16GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
内存RAM