Corsair CMD8GX3M2A2933C12 4GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

报告一个错误

更快的读取速度，GB/s

15.7 13.5

测试中的平均数值
更快的写入速度，GB/s

13.3 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

13.5 15.7
写入速度，GB/s

9.3 13.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2278 3318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Colorful Technology Ltd BAPC08G2666D4S8 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Crucial Technology BLS16G4D240FSE.16FD 16GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Crucial Technology BLS8G4D30AESCK.M8FE 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB