Corsair CMD8GX3M2A2933C12 4GB vs Crucial Technology CT25664BC1339.M8FM 2GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Crucial Technology CT25664BC1339.M8FM 2GB

Crucial Technology CT25664BC1339.M8FM 2GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

更快的读取速度，GB/s

13.5 13.4

测试中的平均数值
更快的写入速度，GB/s

9.3 7.1

测试中的平均数值

Crucial Technology CT25664BC1339.M8FM 2GB

需要考虑的原因
Crucial Technology CT25664BC1339.M8FM 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 -4% 更低的延时

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology CT25664BC1339.M8FM 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 27
读取速度，GB/s

13.5 13.4
写入速度，GB/s

9.3 7.1
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2278 1718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology ADOVE1A0834E 1GB

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Samsung M471B5273EB0-CK0 4GB

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PNY Electronics PNY 2GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Samsung M391A2K43BB1-CPB 16GB

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Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB