Corsair CMD8GX3M2A2933C12 4GB vs Kingston 9965600-023.A00G 16GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Kingston 9965600-023.A00G 16GB

Kingston 9965600-023.A00G 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时
更快的读取速度，GB/s

13.5 9.8

测试中的平均数值
更快的写入速度，GB/s

9.3 8.4

测试中的平均数值

Kingston 9965600-023.A00G 16GB

需要考虑的原因
Kingston 9965600-023.A00G 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Kingston 9965600-023.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

13.5 9.8
写入速度，GB/s

9.3 8.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2278 2159

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.01G86.9H50C 1GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C14-8GTZKY 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMK32GX4M2D3200C16 16GB

Corsair CMK32GX4M2D3200C16 16GB