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Corsair CMD8GX3M2A2933C12 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
比较
Corsair CMD8GX3M2A2933C12 4GB vs Micron Technology V-GeN D4V16GL24A8R 16GB
总分
Corsair CMD8GX3M2A2933C12 4GB
总分
Micron Technology V-GeN D4V16GL24A8R 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
68
左右 59% 更低的延时
更快的写入速度,GB/s
9.3
8.9
测试中的平均数值
需要考虑的原因
Micron Technology V-GeN D4V16GL24A8R 16GB
报告一个错误
更快的读取速度,GB/s
16.9
13.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMD8GX3M2A2933C12 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
68
读取速度,GB/s
13.5
16.9
写入速度,GB/s
9.3
8.9
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2278
2007
Corsair CMD8GX3M2A2933C12 4GB RAM的比较
Samsung M471B5273DH0-CK0 4GB
Mushkin 992015 (997015) 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT32G4SFD832A.M16FF 32GB
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Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK32GX4M4C3333C16 8GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-2133C15-8GRK 8GB
Corsair CMX8GX3M2A1600C11 4GB
Kingston 9965596-016.B01G 8GB
Kingston 9905471-006.A01LF 4GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
报告一个错误
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