Corsair CMD8GX3M2A2933C12 4GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 48% 更低的延时

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

需要考虑的原因
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

报告一个错误

更快的读取速度，GB/s

15.2 13.5

测试中的平均数值
更快的写入速度，GB/s

14.3 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 54
读取速度，GB/s

13.5 15.2
写入速度，GB/s

9.3 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2278 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD4AGU880-36A180C 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Gloway International Co. Ltd. TYA4U2666D19081C 8GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston 9905702-071.A00G 8GB

Kingston 9905702-071.A00G 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Kingston 99P5474-014.A00LF 4GB

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Apacer Technology D22.23263S.002 16GB

Apacer Technology D22.23263S.002 16GB