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Corsair CML8GX3M2A1600C9 4GB
Kingston 9905744-023.A00G 16GB

Corsair CML8GX3M2A1600C9 4GB vs Kingston 9905744-023.A00G 16GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Kingston 9905744-023.A00G 16GB

Kingston 9905744-023.A00G 16GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Kingston 9905744-023.A00G 16GB 需要考虑的原因
Kingston 9905744-023.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 39
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Kingston 9905744-023.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 35
  • 读取速度，GB/s
    14.6 left arrow 15.3
  • 写入速度，GB/s
    8.8 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 2640

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905744-023.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CML8GX3M2A1600C9 4GB
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Kingston KHX1600C9D3/8G 8GB
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内存RAM
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内存RAM
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Samsung M386A8K40BM1-CRC 64GB
内存RAM
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Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM