Corsair CMX8GX3M2A1600C11 4GB vs Crucial Technology BLS8G4D26BFSC.16FE 8GB

总分

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

差异规格评论

差异

Corsair CMX8GX3M2A1600C11 4GB

需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 66

左右 41% 更低的延时
更快的写入速度，GB/s

9.8 8.3

测试中的平均数值

Crucial Technology BLS8G4D26BFSC.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FE 8GB

报告一个错误

更快的读取速度，GB/s

16.1 12.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A1600C11 4GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 66
读取速度，GB/s

12.1 16.1
写入速度，GB/s

9.8 8.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2453 1810

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston ACR26D4S9D8ME-16 16GB

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Corsair CMX8GX3M2A1600C11 4GB

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CM4B8G2J2133A15S 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMR64GX4M4C3333C16 16GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Kingston XN205T-HYD2 16GB

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SK Hynix HMAA1GU6CJR6N-XN 8GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB

Crucial Technology CT16G4DFRA32A.C16FN 16GB