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Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
比较
Corsair CMZ16GX3M2A2400C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
总分
Corsair CMZ16GX3M2A2400C10 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
更快的读取速度,GB/s
11.4
9.3
测试中的平均数值
更快的写入速度,GB/s
7.4
7.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
37
左右 -3% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
36
读取速度,GB/s
11.4
9.3
写入速度,GB/s
7.4
7.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1683
1891
Corsair CMZ16GX3M2A2400C10 8GB RAM的比较
G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM的比较
Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
SK Hynix HMT325S6BFR8C-H9 2GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K1KBB1-CRC 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology GD2.0927WH.001 8GB
Kingston 9905474-019.A00LF 2GB
Samsung M378A2K43CB1-CTD 16GB
Kingston 99U5584-007.A00LF 4GB
A-DATA Technology AO1P32MC8T1-BW3S 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMSX16GX4M2A3000C16 8GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
V-GEN D4H4GL26A8TS5 4GB
Samsung M386B4G70DM0-CMA4 32GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
SK Hynix HMT351S6CFR8C-PB 4GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3600C16-32GTZN 32GB
报告一个错误
×
Bug description
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