Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 37% 更低的延时
更快的读取速度，GB/s

15.5 15

测试中的平均数值

Micron Technology 16ATF2G64AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB

报告一个错误

更快的写入速度，GB/s

12.5 11.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 38
读取速度，GB/s

15.5 15.0
写入速度，GB/s

11.0 12.5
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2445 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2Z3600C20 8GB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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Samsung M378B5673FH0-CH9 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905678-177.A00G 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Essencore Limited KD4AGU880-32A160T 16GB

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G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB