RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
OCZ OCZ3BE1600C8LV2G 2GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs OCZ OCZ3BE1600C8LV2G 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分
star star star star star
OCZ OCZ3BE1600C8LV2G 2GB

OCZ OCZ3BE1600C8LV2G 2GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 63
    左右 62% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 6.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 4.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 8500
    左右 2.26% 更高的带宽
OCZ OCZ3BE1600C8LV2G 2GB 需要考虑的原因
OCZ OCZ3BE1600C8LV2G 2GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
OCZ OCZ3BE1600C8LV2G 2GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    24 left arrow 63
  • 读取速度，GB/s
    15.5 left arrow 6.7
  • 写入速度，GB/s
    11.0 left arrow 4.9
  • 内存带宽，mbps
    19200 left arrow 8500
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 7-7-7-20 / 1066 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 1248

Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

OCZ OCZ3BE1600C8LV2G 2GB RAM的比较

SK Hynix HMT325S6CFR8C-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMD8GX4M2B3866C18 4GB
Corsair CMD8GX4M2B3866C18 4GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Gloway International (HK) STK4U2133D15081C 8GB
Gloway International (HK) STK4U2133D15081C 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
SK Hynix HMA42GR7AFR4N-TF 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Corsair CMD16GX4M2B3733C17 8GB
Corsair CMD16GX4M2B3733C17 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM