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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
24
左右 -4% 更低的延时
更快的读取速度,GB/s
17.2
15.5
测试中的平均数值
更快的写入速度,GB/s
13.0
11.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
23
读取速度,GB/s
15.5
17.2
写入速度,GB/s
11.0
13.0
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2445
3004
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M378B5173BH0-CH9 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMW32GX4M4Z2933C16 8GB
Kingston 9905471-002.A00LF 2GB
Shenzhen Technology Co Ltd 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3000C16-8GSXKB 8GB
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AMD R5S38G1601U2S 8GB
Kingston 9905678-121.A00G 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CB8GU2400.C8ET 8GB
报告一个错误
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Bug description
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