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Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3200C16-8GTZN 8GB

Crucial Technology CT102464BF160B-16F 8GB vs G Skill Intl F4-3200C16-8GTZN 8GB

总分
star star star star star
Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B-16F 8GB 需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB
报告一个错误
G Skill Intl F4-3200C16-8GTZN 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZN 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 28
  • 读取速度，GB/s
    12.8 left arrow 19.7
  • 写入速度，GB/s
    9.4 left arrow 15.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2282 left arrow 3717

Crucial Technology CT102464BF160B-16F 8GB RAM的比较

Kingston KN2M64-ETB 8GB
Kingston 9905428-123.A00LF 8GB

G Skill Intl F4-3200C16-8GTZN 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA84GL7MMR4N-TF 32GB
SK Hynix HMA84GL7MMR4N-TF 32GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Kingston 9965596-029.B00G 4GB
Kingston 9965596-029.B00G 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965657-011.A00G 16GB
Kingston 9965657-011.A00G 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CM4B8G2J2400A14K 8GB
Corsair CM4B8G2J2400A14K 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM