Samsung M4 70T5663CZ3-CE6 2GB vs Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

需要考虑的原因
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 69

左右 -130% 更低的延时
更快的写入速度，GB/s

13.7 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 30
读取速度，GB/s

3,325.1 16.7
写入速度，GB/s

1,441.2 13.7
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 3254

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3300C16-16GTZ 16GB

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Crucial Technology CT102464BF160B-16F 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Samsung M378B5773DH0-CH9 2GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

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A-DATA Technology AM1U16BC4P2-B19H 4GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB