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Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT25664BA160B.C16F 2GB vs Crucial Technology CT4G4DFS8266.C8FE 4GB

总分
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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.4
    测试中的平均数值
Crucial Technology CT4G4DFS8266.C8FE 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8266.C8FE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 47
  • 读取速度，GB/s
    14.3 left arrow 14.0
  • 写入速度，GB/s
    10.1 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2640

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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内存RAM
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Samsung M4 70T5663QH3-CF7 2GB
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