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Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A4G43BB1-CWE 32GB

Crucial Technology CT25664BA160B.C16F 2GB vs Samsung M471A4G43BB1-CWE 32GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 70
    左右 59% 更低的延时
Samsung M471A4G43BB1-CWE 32GB 需要考虑的原因
Samsung M471A4G43BB1-CWE 32GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A4G43BB1-CWE 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 70
  • 读取速度，GB/s
    14.3 left arrow 15.0
  • 写入速度，GB/s
    10.1 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 2519

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Samsung M471A4G43BB1-CWE 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M471A4G43BB1-CWE 32GB
Samsung M471A4G43BB1-CWE 32GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3200C16-16GTZR 16GB
G Skill Intl F4-3200C16-16GTZR 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905713-017.A00G 4GB
Kingston 9905713-017.A00G 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5773CHS-CH9 2GB
Samsung M471B5773CHS-CH9 2GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston HP24D4S7S8MBP-8 8GB
Kingston HP24D4S7S8MBP-8 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston 9965662-015.A00G 16GB
Kingston 9965662-015.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMR16GX4M2E4266C19 8GB
Corsair CMR16GX4M2E4266C19 8GB
内存RAM