Crucial Technology CT25664BA160B.C16F 2GB vs Smart Modular SMS4WEC3C0K0446SCG 4GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时

Smart Modular SMS4WEC3C0K0446SCG 4GB

需要考虑的原因
Smart Modular SMS4WEC3C0K0446SCG 4GB

报告一个错误

更快的读取速度，GB/s

16 14.3

测试中的平均数值
更快的写入速度，GB/s

12.7 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

14.3 16.0
写入速度，GB/s

10.1 12.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2227 2353

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1G44AB0-CWE 8GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 99U5665-001.A00G 4GB

Kingston 99U5665-001.A00G 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

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Kingston 9965525-140.A00LF 8GB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Crucial Technology CT32G4DFD832A.C16FE 32GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8