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Crucial Technology CT51264BA1339.D16F 4GB
Ramos Technology RMB4GB58BCA4-13HC 4GB

Crucial Technology CT51264BA1339.D16F 4GB vs Ramos Technology RMB4GB58BCA4-13HC 4GB

总分
star star star star star
Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分
star star star star star
Ramos Technology RMB4GB58BCA4-13HC 4GB

Ramos Technology RMB4GB58BCA4-13HC 4GB

差异 规格 评论

差异

Crucial Technology CT51264BA1339.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
Ramos Technology RMB4GB58BCA4-13HC 4GB 需要考虑的原因
Ramos Technology RMB4GB58BCA4-13HC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 39
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    13.5 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 8.2
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Ramos Technology RMB4GB58BCA4-13HC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    39 left arrow 27
  • 读取速度，GB/s
    13.2 left arrow 13.5
  • 写入速度，GB/s
    8.2 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2165 left arrow 2336

Crucial Technology CT51264BA1339.D16F 4GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB

Ramos Technology RMB4GB58BCA4-13HC 4GB RAM的比较

Kingston 9965589-033.D00G 8GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Crucial Technology CT51264BA1339.D16F 4GB
Ramos Technology RMB4GB58BCA4-13HC 4GB
Ramos Technology RMB4GB58BCA4-13HC 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
SK Hynix DDR2 800 2G 2GB
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内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
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内存RAM
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内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
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Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
内存RAM
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内存RAM
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Samsung M471B5173QH0-YK0 4GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-2133C15-8GNT 8GB
G Skill Intl F4-2133C15-8GNT 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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内存RAM
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内存RAM
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Corsair CMN32GX4M2Z3600C18 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMW64GX4M8A2666C16 8GB
Corsair CMW64GX4M8A2666C16 8GB
内存RAM