Crucial Technology CT51264BD1339.M16F 4GB

Panram International Corporation W4U3200PS-16G 16GB

Crucial Technology CT51264BD1339.M16F 4GB vs Panram International Corporation W4U3200PS-16G 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 32

左右 22% 更低的延时

Panram International Corporation W4U3200PS-16G 16GB

需要考虑的原因
Panram International Corporation W4U3200PS-16G 16GB

报告一个错误

更快的读取速度，GB/s

18.6 12.1

测试中的平均数值
更快的写入速度，GB/s

15.8 8.6

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Panram International Corporation W4U3200PS-16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 32
读取速度，GB/s

12.1 18.6
写入速度，GB/s

8.6 15.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2045 3851

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA42GR7MFR4N-TF 16GB

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Micron Technology 4ATF51264AZ-3G2E1 4GB

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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

AMD R5S38G1601U2S 8GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Kingston 9965596-023.B01G 8GB

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